1 features ? direct attach led technology ? rectangular led rf performance C 450 & 460 nm C 485 mw min ? high reliability - eutectic attach ? low forward voltage (vf) C 3.15 v typical at 350 ma ? maximum dc forward current C 1000 ma ? ingan junction-down design for improved thermal management ? no wire bonds required applications ? general illumination ? aircraft ? decorative lighting ? task lighting ? outdoor illumination ? white leds ? camera flash ? projection displays ? automotive direct attach da1000? leds c xxx da1000-s xx 000 data sheet crees direct attach da1000 leds are the next generation of solid-state led emitters that combine highly effcient ingan materials with crees proprietary device technology and silicon-carbide substrates to deliver superior value for the general-illumination market. the da1000 leds are among the brightest in the lighting market while delivering a low forward voltage, resulting in a very bright and highly effcient solution. the bondpad-down design allows for a eutectic direct die-attach process, eliminating the need for wire bonds, and enables superior performance from improved thermal management. c xxx da1000-s xx 000 chip diagram d a t a s h e e t : c p r 3 e s r e v a top view bottom view die cross section anode (+) 945 x 75 m da1000 led 1000 x 1000 m t = 335 m cathode (-) 945 x 795 m gap 75 m subject to change without notice. www.cree.com
2 maximum ratings at t a = 25c notes 1,2 & 3 c xxx da1000-s xx 000 dc forward current 1000 ma peak forward current (1/10 duty cycle @ 1 khz) 1250 ma led junction temperature 150c reverse voltage 5 v operating temperature range -40c to +100c storage temperature range -40c to +100c typical electrical/optical characteristics at t a = 25c, if = 350 ma note 2 part number forward voltage (v f , v) reverse current [i(vr=5v), a] full width half max ( d , nm) min. typ. max. max. typ. c450da1000-s xx 000 2.7 3.15 3.5 2 20 c460da1000-s xx 000 2.7 3.15 3.5 2 21 mechanical specifcations c xxx da1000-s xx 000 description dimension tolerance p-n junction area (m) 960 x 960 35 chip bottom area (m) 1000 x 1000 35 chip top area (m) 630 x 630 45 chip thickness (m) 335 25 ausn bond pad width C anode (um) 75 15 ausn bond pad length C anode (um) 945 35 ausn bond pad width C cathode (um) 795 35 ausn bond pad length C cathode (um) 945 35 bond pad gap (m) 75 15 ausn bond pad thickness (m) 3 0.5 notes: 1. maximum ratings are package-dependent. the above ratings were determined using a cree 3.45-mm x 3.45-mm smt package (with silicone encapsulation and intrinsic ausn metal die attach) for characterization. ratings for other packages may differ. junction temperature should be characterized in a specifc package to determine limitations. assembly processing temperature must not exceed 325c (< 5 seconds). 2. all products conform to the listed minimum and maximum specifcations for electrical and optical characteristics when assembled and operated at 350 ma within the maximum ratings shown above. effciency decreases at higher currents. typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. all measurements were made using lamps in t-1? packages (with hysol os4000 epoxy encapsulant and intrinsic ausn metal die attach). optical characteristics measured in an integrating sphere using illuminance e. 3. the maximum forward current is determined by the thermal resistance between the led junction and ambient. it is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the led junction to ambient in order to optimize product performance. 0 200 400 600 800 1000 1200 25 50 75 100 125 150 175 maximum forward current (ma) ambient temperature ( ? c) rth j - a = 10 ? c/w rth j - a = 15 ? c/w rth j - a = 20 ? c/w rth j - a = 25 ? c/w copyright ? 2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and da and da1000 are trademarks of cree, inc. cpr3es rev a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com
3 standard bins for c xxx da1000-s xx 000 led chips are sorted to the radiant fux and dominant wavelength bins shown. a sorted die sheet contains die from only one bin. sorted die kit (c xxx da1000-s xxxxx ) orders may be flled with any or all bins (c xxx da1000- xxxxx ) contained in the kit. all radiant fux and dominant wavelength values shown and specifed are at if = 350 ma. note: the radiant-fux values above are representative of the die in a t-1? encapsulated 5-mm lamp. dominant wavelength (nm) c450da1000-s48500 c450da1000-0325 c450da1000-0326 c450da1000-0327 c450da1000-0328 c450da1000-0321 c450da1000-0322 c450da1000-0323 c450da1000-0324 c450da1000-0317 c450da1000-0318 c450da1000-0319 c450da1000-0320 c450da1000-0313 c450da1000-0314 c450da1000-0315 c450da1000-0316 c450da1000-0309 c450da1000-0310 c450da1000-0311 c450da1000-0312 447.5 450 452.5 445 455 625 585 550 515 485 radiant flux (mw) c460da1000-s48500 c460da1000-0325 c460da1000-0326 C460DA1000-0327 c460da1000-0328 c460da1000-0321 c460da1000-0322 c460da1000-0323 c460da1000-0324 c460da1000-0317 c460da1000-0318 c460da1000-0319 c460da1000-0320 c460da1000-0313 c460da1000-0314 c460da1000-0315 c460da1000-0316 c460da1000-0309 c460da1000-0310 c460da1000-0311 c460da1000-0312 dominant wavelength (nm) 457.5 460 462.5 455 465 625 585 550 515 485 radiant flux (mw) copyright ? 2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and da and da1000 are trademarks of cree, inc. cpr3es rev a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com
4 characteristic curves these are representative measurements for the da led product. actual curves will vary slightly for the various radiant fux and dominant wavelength bins. 0% 50% 100% 150% 200% 250% 0 200 400 600 800 1000 relative light intensity if (ma) relative intensity vs. forward current - 2 - 1 0 1 2 0 200 400 600 800 1000 dominant wavelength shift (nm) if (ma) wavelength shift vs. forward current 0% 50% 100% 150% 200% 250% 0 200 400 600 800 1000 relative light intensity if (ma) relative intensity vs. forward current -2 -1 0 1 2 0 200 400 600 800 1000 dominant wavelength shift (nm) if (ma) wavelength shift vs. forward current 0 100 200 300 400 500 600 700 800 900 1000 0 1 2 3 4 5 if (ma) vf (v) forward current vs. forward voltage 65% 70% 75% 80% 85% 90% 95% 100% 25 50 75 100 125 150 relative light intensity junction temperature ( c) relative light intensity vs junction temperature 0 100 200 300 400 500 600 700 800 900 1000 0 1 2 3 4 5 if (ma) vf (v) forward current vs. forward voltage 65% 70% 75% 80% 85% 90% 95% 100% 25 50 75 100 125 150 relative light intensity junction temperature ( c) relative light intensity vs junction temperature 0 1 2 3 4 5 6 25 50 75 100 125 150 dominant wavelength shift (nm) junction temperature ( c) dominant wavelength shift vs junction temperature - 0.350 - 0.300 - 0.250 - 0.200 - 0.150 - 0.100 - 0.050 0.000 25 50 75 100 125 150 voltage shift (v) junction temperature ( c) voltage shift vs junction temperature 0 1 2 3 4 5 6 25 50 75 100 125 150 dominant wavelength shift (nm) junction temperature ( c) dominant wavelength shift vs junction temperature - 0.350 - 0.300 - 0.250 - 0.200 - 0.150 - 0.100 - 0.050 0.000 25 50 75 100 125 150 voltage shift (v) junction temperature ( c) voltage shift vs junction temperature copyright ? 2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and da and da1000 are trademarks of cree, inc. cpr3es rev a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com
5 radiation pattern this is a representative radiation pattern for the da led product. actual patterns will vary slightly for each chip. copyright ? 2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and da and da1000 are trademarks of cree, inc. cpr3es rev a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com
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